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Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate

机译:在共用硅基板上形成有CMOS电路和MEMS谐振器的微电子设备

摘要

A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
机译:提供了一种用于制造MEMS谐振器的方法。形成包括硅衬底,多个金属层和隔离层的堆叠主体,并具有从金属层延伸到硅衬底中的第一蚀刻通道。隔离层填充在第一蚀刻通道中。堆叠的主体还具有预定的悬挂部分。随后,去除隔离层的一部分,从而形成第二蚀刻通道,并且隔离层的剩余部分覆盖第一蚀刻通道的内侧壁。之后,以覆盖第一刻蚀通道的内侧壁的隔离层作为掩模,通过第二刻蚀通道的各向同性刻蚀工艺被应用于硅衬底,从而形成悬挂在硅衬底上方的MEMS谐振器。还提供了微电子设备。

著录项

  • 公开/公告号US8692338B2

    专利类型

  • 公开/公告日2014-04-08

    原文格式PDF

  • 申请/专利权人 PIXART IMAGING INC.;

    申请/专利号US201213673459

  • 发明设计人 CHUAN-WEI WANG;HSIN-HUI HSU;SHENG-TA LEE;

    申请日2012-11-09

  • 分类号H01L29/84;

  • 国家 US

  • 入库时间 2022-08-21 15:59:34

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