首页> 外国专利> A METHOD FOR FABRICATING A MICRO STRUCTURE ON SILICON SUBSTRATE WITH A CMOS CIRCUIT, AND A MEMS DEVICE COMPRISING THE MICRO STRUCTURE FABRICATED BY THE SAME METHOD

A METHOD FOR FABRICATING A MICRO STRUCTURE ON SILICON SUBSTRATE WITH A CMOS CIRCUIT, AND A MEMS DEVICE COMPRISING THE MICRO STRUCTURE FABRICATED BY THE SAME METHOD

机译:用CMOS电路在硅衬底上制造微结构的方法以及包括用同一方法制造的微结构的MEMS装置

摘要

A method for forming a micro structure on a silicon substrate integrated with a CMOS circuit and an MEMS(Micro-Electro-Mechanical System) device with the micro structure manufactured thereby are provided to prevent the damage of the CMOS circuit due to a micro structure forming process by enclosing the CMOS circuit integrated portion using a protection layer. A first protection layer(24) is formed on a single crystal silicon substrate(110) to enclose a CMOS circuit portion of the substrate. A mask pattern is formed on the resultant structure. A trench is formed on the resultant structure by patterning selectively the substrate using the mask pattern as an etch mask. A second protection layer is formed at sidewalls of the trench. The second protection layer is selectively removed from a bottom portion of the trench. An additional etching process is performed on the substrate by using the second protection layer as an etch mask. A cavity is formed on the bottom portion of the trench by a wet etching process. At this time, a micro structure floats from the bottom portion of the trench. Then, the remaining second protection layer is removed.
机译:提供一种用于在集成有CMOS电路的硅基板上形成微结构的方法以及具有由此制造的微结构的MEMS(微机电系统)器件,以防止由于微结构形成而导致的CMOS电路损坏。通过使用保护层封闭CMOS电路集成部分来进行处理。在单晶硅衬底(110)上形成第一保护层(24)以包围衬底的CMOS电路部分。在所得结构上形成掩模图案。通过使用掩模图案作为蚀刻掩模选择性地构图衬底,在所得结构上形成沟槽。在沟槽的侧壁处形成第二保护层。从沟槽的底部选择性地去除第二保护层。通过使用第二保护层作为蚀刻掩模在基板上执行附加蚀刻工艺。通过湿蚀刻工艺在沟槽的底部上形成腔。此时,微结构从沟槽的底部漂浮。然后,去除剩余的第二保护层。

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