首页>
外国专利>
A METHOD FOR FABRICATING A MICRO STRUCTURE ON SILICON SUBSTRATE WITH A CMOS CIRCUIT, AND A MEMS DEVICE COMPRISING THE MICRO STRUCTURE FABRICATED BY THE SAME METHOD
A METHOD FOR FABRICATING A MICRO STRUCTURE ON SILICON SUBSTRATE WITH A CMOS CIRCUIT, AND A MEMS DEVICE COMPRISING THE MICRO STRUCTURE FABRICATED BY THE SAME METHOD
展开▼
机译:用CMOS电路在硅衬底上制造微结构的方法以及包括用同一方法制造的微结构的MEMS装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for forming a micro structure on a silicon substrate integrated with a CMOS circuit and an MEMS(Micro-Electro-Mechanical System) device with the micro structure manufactured thereby are provided to prevent the damage of the CMOS circuit due to a micro structure forming process by enclosing the CMOS circuit integrated portion using a protection layer. A first protection layer(24) is formed on a single crystal silicon substrate(110) to enclose a CMOS circuit portion of the substrate. A mask pattern is formed on the resultant structure. A trench is formed on the resultant structure by patterning selectively the substrate using the mask pattern as an etch mask. A second protection layer is formed at sidewalls of the trench. The second protection layer is selectively removed from a bottom portion of the trench. An additional etching process is performed on the substrate by using the second protection layer as an etch mask. A cavity is formed on the bottom portion of the trench by a wet etching process. At this time, a micro structure floats from the bottom portion of the trench. Then, the remaining second protection layer is removed.
展开▼