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3D INTEGRATION MICROELECTRONIC ASSEMBLY FOR INTEGRATED CIRCUIT DEVICES AND METHOD OF MAKING SAME

机译:集成电路设备的3D集成微电子组件及其制造方法

摘要

A microelectronic assembly for packaging/encapsulating IC devices, which includes a crystalline substrate handler having opposing first and second surfaces and a cavity formed into the first surface, a first IC device disposed in the cavity and a second IC device mounted to the second surface, and a plurality of interconnects formed through the crystalline substrate handler. Each of the interconnects includes a hole formed through the crystalline substrate handler from the first surface to the second surface, a compliant dielectric material disposed along the hole's sidewall, and a conductive material disposed along the compliant dielectric material and extending between the first and second surfaces. The compliant dielectric material insulates the conductive material from the sidewall. The second IC device, which can be an image sensor, is electrically coupled to the conductive materials of the plurality of interconnects. The first IC can be a processor for processing the signals from the image sensor.
机译:一种用于封装/封装IC器件的微电子组件,其包括:具有相对的第一和第二表面以及形成在所述第一表面中的腔的晶体衬底处理机;设置在所述腔中的第一IC器件;以及安装到所述第二表面的第二IC器件,穿过晶体衬底处理器形成的多个互连。每个互连件包括从第一表面到第二表面穿过结晶衬底操纵器形成的孔,沿着孔的侧壁设置的顺应性电介质材料以及沿着顺应性电介质材料并在第一和第二表面之间延伸的导电材料。 。顺应性电介质材料使导电材料与侧壁绝缘。可以是图像传感器的第二IC器件电耦合到多个互连的导电材料。第一IC可以是用于处理来自图像传感器的信号的处理器。

著录项

  • 公开/公告号KR101384912B1

    专利类型

  • 公开/公告日2014-04-11

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120060533

  • 发明设计人 오가네시안 베지;

    申请日2012-06-05

  • 分类号H01L23/12;H01L23/48;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:08

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