semiconductor device including double gate controlled diode structure

摘要

PURPOSE: A semiconductor device including a diode structure which is controlled by a double gate is provided to control the intensity of a light which is emitted from the semiconductor area by controlling the voltage applied on the semiconductor area using a first electrode and a second electrode. CONSTITUTION: A source area(220) and a drain area(230) are arranged on the both end of a semiconductor area(210). A first insulator(240) is arranged on the semiconductor area. A first electrode changes the distribution state of either of an electron or a hole on the semiconductor area. A second insulator(260) is arranged on the lower side of the semiconductor area. A second electrode(270) changes the distribution state of either of the electron or the hole under the semiconductor area.