Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structureudfor Use in High Frequencies and Medical Devices

摘要

AbstractudPower transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensivelyudin the amplifier circuits of medical devices. The aim of thi s research was to construct a VDMOS power transistorudwith an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon byudimplanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield w as implanted in order toudreplace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in orderudto decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The researc hudtool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOSudstructure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdownudvoltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow anduddecreasing Ron. This consequently resulted in enhancing the operation of high -frequency medical devices that useudtransistors, such as Radio Frequency (RF) and electro cardiograph machines.