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FinFET HAVING SUPPRESSED LEAKAGE CURRENT
FinFET HAVING SUPPRESSED LEAKAGE CURRENT
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机译:FinFET具有抑制的泄漏电流
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摘要
A FinFET device which includes: a semiconductor substrate; a three dimensional fin oriented perpendicularly to the semiconductor substrate; a local trench isolation between the three dimensional fin and an adjacent three dimensional fin; a nitride layer on the local trench isolation; a gate stack wrapped around a central portion of the three dimensional fin and extending through the nitride layer; sidewall spacers adjacent to the gate stack and indirectly in contact with the nitride layer, two ends of the three dimensional fin extending from the sidewall spacers, a first end being for the source of the FET device and a second end being for a drain of the FET device; and an epitaxial layer covering each end of the three dimensional fin and being on the nitride layer. Also disclosed is a method of fabricating a FinFET device.
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