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Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices
Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices
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机译:均匀掺杂的漏电流限流器,可应对大容量FinFET器件中的沟道漏电流
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摘要
Embodiments are directed to a method of forming a leakage current stopper of a fin-type field effect transistor (FinFET). The method includes forming at least one fin having an active region, a non-active region and a channel region in the active region. The method further includes exposing a surface of the non-active region, wherein the exposed surface leads to a portion of the non-active region that is substantially underneath the channel region. The method further includes implanting dopants through the exposed surface of the non-active region to form the leakage current stopper region.
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