A sub-10nm U-shape FinFET design with suppressed leakage current and DIBL effect

摘要

In this paper, a U-shape fin field-effect transistor (U-FinFET) is proposed for sub-10nm technology and low power applications. Compared with the conventional tri-gate fin field-effect transistor (FinFET), this structure has the advantages of relatively low off-state channel leakage current (I) and sub-threshold swing (SS). By using Sentaurus TCAD simulations, it is found that the U-shape channel can also suppress the drain induced barrier lowering (DIBL) effect.