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Semiconductor package having through silicon via (TSV) interposer and method of manufacturing the semiconductor package

机译:具有硅通孔(TSV)中介层的半导体封装及其制造方法

摘要

A semiconductor package having a reduced size by including an interposer having through substrate vias (TSVs), the semiconductor package may comprise a lower semiconductor package which includes a lower base substrate, an interposer with TSVs on the lower base substrate, and a lower semiconductor chip on the interposer and electrically connected to the interposer. The semiconductor package may include an upper semiconductor package on the lower semiconductor package including an upper semiconductor chip and package connecting members on the interposer and electrically connect the upper semiconductor package to the interposer. An exterior molding member may be provided.
机译:通过包括具有贯通衬底通孔(TSV)的中介层来减小尺寸的半导体封装,该半导体封装可以包括下部半导体封装,其包括下部基础衬底,在下部基础衬底上具有TSV的中介层以及下部半导体芯片在插入器上并电连接到插入器。半导体封装件可以包括在下部半导体封装件上的上部半导体封装件,下部半导体封装件包括上部半导体芯片和插入件上的封装件连接构件,并且将上部半导体封装件电连接到插入件。可以提供外部成型构件。

著录项

  • 公开/公告号US8928132B2

    专利类型

  • 公开/公告日2015-01-06

    原文格式PDF

  • 申请/专利权人 YUNSEOK CHOI;CHUNGSUN LEE;

    申请/专利号US201113188554

  • 发明设计人 YUNSEOK CHOI;CHUNGSUN LEE;

    申请日2011-07-22

  • 分类号H01L23/02;H01L21/56;H01L23/31;H01L25/10;H01L23/14;H01L23/498;H01L21/48;

  • 国家 US

  • 入库时间 2022-08-21 15:16:40

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