Method of forming thin film interconnect and thin film interconnect

摘要

A method of forming a thin film interconnect in which a film is formed by sputtering method using a Cu-Ca alloy target and a thin film interconnect formed by the method, the method comprising: forming a Cu-Ca alloy film by sputtering method using a Cu-Ca alloy target that contains 0.5 atomic % or more and less than 5 atomic % of Ca, and the balance consisting of Cu and unavoidable impurities; and performing heat treatment of the Cu-Ca alloy film at a temperature of 300 to 7000C in an inert gas atmosphere containing trace amount of oxygen defined by oxygen partial pressure in the range of 10-4 to 10-10 atm.