Current sustainability and electromigration of Pd,Sc and Y thin-films as potential interconnects

摘要

The progress on novel interconnects for carbon nanotube(CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors.The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects,as it requires electrochemical deposition followed by chemical-mechanical polishing.We report our experimental results on the failure current density,resistivity,electromigration effect and failure mechanism of patterned stripes of Pd,Sc and Y thin-films,regarding them as the potential novel interconnects.The Pd stripes have a failure current density of(8~10)×106 A/cm~2(MA/cm~2),and they are stable when the working current density is as much as 90% of the failure current density.However,they show a resistivity around 210 μΩ·cm,which is 20 times of the bulk value and leaving room for improvement.Compared to Pd,the Sc stripes have a similar resistivity but smaller failure current density of 4~5 MA/cm~2.Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation.For comparison,Au stripes of the same dimensions show a failure current density of 30 MA/cm~2 and a resistivity around 4 μΩ·cm,making them also a good material as novel interconnects.