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SUPER-JUNCTION TRENCH MOSFETS WITH CLOSED CELL LAYOUT HAVING SHIELDED GATE
SUPER-JUNCTION TRENCH MOSFETS WITH CLOSED CELL LAYOUT HAVING SHIELDED GATE
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机译:具有屏蔽栅的闭合电池布局的超结型沟道MOSFET
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摘要
A super-junction trench MOSFET with closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell and the shielded gate disposed in the deep trench. Trenched source-body contacts are at least formed between the closed gate trenches and the deep trench. The deep trench has square, rectangular, circle or hexagon shape.
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