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Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

机译：异结二极管屏蔽SIC分流栅极沟槽MOSFET，具有优化的反向恢复特性和低开关损耗

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Junjie An; Shengdong Hu;
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1. A Novel 4H-SiC Super Junction UMOSFET with Heterojunction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss [J] . J. Kim, K. Kim Физика и техника полупроводников . 2020,第5期

机译：一种新型的4H-SiC 超级结 UMOSFET 与异质结二极管的增强型反向恢复特性和低开关损耗
2. A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss [J] . Kim J., Kim K. Semiconductors . 2020,第5期

机译：具有杂连接二极管的新型4H-SiC超结Umosfet，用于增强反向恢复特性和低开关损耗
3. SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability [J] . An Junjie, Hu Shengdong Power Electronics, IET . 2019,第8期

机译：具有异质结二极管的SiC沟槽MOSFET具有低开关损耗和高短路能力
4. Accurate Analytical Switching Loss Model for High Voltage SiC MOSFETs Includes Parasitics and Body Diode Reverse Recovery Effects [C] . Soheila Eskandari, Kang Peng, Bo Tian, IEEE Energy Conversion Congress and Exposition . 2018

机译：高压SiC MOSFET的精确分析开关损耗模型包括寄生效应和体二极管反向恢复效应
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics [O] . Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim 2021

机译：4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
7. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics [O] . Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim 2021

机译：4H-SIC双沟MOSFET采用分流异质结闸，用于改善开关特性

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

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