机译:4H-SiC沟槽栅极MOSFET中沟槽底部屏蔽区的自对准形成
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Fuji Elect Co Ltd, Shinagawa Ku, Tokyo 1410032, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Fuji Elect Co Ltd, Shinagawa Ku, Tokyo 1410032, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Fuji Elect Co Ltd, Shinagawa Ku, Tokyo 1410032, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Toshiba Co Ltd, Kawasaki, Kanagawa 2128582, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Fuji Elect Co Ltd, Shinagawa Ku, Tokyo 1410032, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;
R&D Partnership Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan|Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;
机译:沟槽底部屏蔽区对4H-SiC双沟道MOSFET开关特性的影响
机译:使用底部保护p阱的沟槽轮廓和自对准离子注入对1.2 kV 4H-SiC沟槽MOSFET的电特性的影响
机译:具有浮动区域的优化的p〜+屏蔽4H-SiC沟道栅MOSFET结构
机译:沟槽底部屏蔽区域对4H-SIC双沟MOSFET开关特性的作用
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:4H-SIC双沟MOSFET采用分流异质结闸,用于改善开关特性
机译:具有高迁移率的常闭4H-siC沟槽栅极mOsFET(预印刷)