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Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal
Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal
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机译:固体电解质掺杂有第二种金属的基于金属氧化物的导电桥随机存取存储器(CBRAM)
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摘要
A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.
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