A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

摘要

A unified model is developed for the first time to explain the metallic filament growth from either anode or cathode for conductive-bridge random access memory (CBRAM). Both electrochemical reactions and ion/electron transport are considered. Simulation results reveal that diffusion coefficient and mobility of cations in the electrolyte are responsible for determining the growth direction of the conductive metallic-filament. The simulation results for the forming process of CBRAM are compared to experimental data and good agreement is achieved.