Analysis of the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using a single-phase-lag (SPL) model

摘要

The main objective of this work is to study the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using the single-phase-lag heat conduction model to describe the effects of the metallic conductive filament (CF) radius and the reset voltage on the thermal and electric field. The results reveal that the CF geometry plays an important role in the transient Joule heating. The heat wave of fast transient conduction is stronger in the narrow region of the CF during the reset process for a high applied voltage and a small top radius of the CF. It is demonstrated that the presented model can predict the nanoscale heat transfer in the transient state and during the reset process in the CBRAM. Finally, numerical computations are carried out using the finite-element method to solve the nonlinear heat conduction equations.