Conductive-bridging random access memory-memory device e.g. programmable metallization cell memory device, has writing potential units providing writing potential, and logic applying writing potential on memory unit in writing mode

摘要

The device has a resistance memory cell (2) with a resistance memory unit (3), and an operating voltage connection for reception of high and low operating potentials. An addressing logic (10) is operated with an operating voltage. Writing potential units (13, 14) provide writing potential, where the potential is higher than the high operating potential or equal or lower than the low operating potential. The logic is formed to apply the writing potential on the resistance memory unit in a writing mode. The logic controls word and bit lines. An independent claim is also included for a method of characterizing a resistance memory cell in a conductive bridging random access memory (CBRAM).