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Semiconductor non-volatile storage device having verification potential applying device for re-writing to insufficiently written memory cells
Semiconductor non-volatile storage device having verification potential applying device for re-writing to insufficiently written memory cells
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机译:具有验证电位施加装置的半导体非易失性存储装置,用于向写得不够充分的存储单元进行重写
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摘要
A semiconductor non-volatile storage device has a memory cell array including a plurality of memory cells arranged in a form of matrix. Each of the memory cells has a charge accumulation layer and a control gate stacked on a semiconductor substrate for enabling electrical updating by increasing and decreasing of charge in the charge accumulation layer. An equal level of verification potential is applied for all of bit lines of the memory cells and a predetermined verification potential is applied to a selected control gate for performing re-writing for insufficiently written memory cells without generating data for re- writing per every verification by a logic circuit.
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