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WEAK ERASE AFTER PROGRAMMING TO IMPROVE DATA RETENTION IN CHARGE-TRAPPING MEMORY
WEAK ERASE AFTER PROGRAMMING TO IMPROVE DATA RETENTION IN CHARGE-TRAPPING MEMORY
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机译:编程后的弱擦除可改善电荷陷阱存储器中的数据保留
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摘要
Techniques are provided to improve long term data retention in a charge-trapping memory device. In addition to a primary charge-trapping layer in which most charges are stored, the memory device may include a tunneling layer comprising an engineered tunneling barrier such as oxide-nitride-oxide. The nitride in the tunneling layer may also store some charges after programming. After the programming, a data retention operation is performed which de-traps some electrons from the tunneling layer, in addition to injecting holes into the tunneling layer which form neutral electron-hole dipoles in place of electrons. These mechanisms tend to lower threshold voltage. Additionally, the data retention operation redistributes the electrons and the holes inside the charge-trapping layer, resulting in an increase in threshold voltage which roughly cancels out the decrease when the data retention operation is optimized.
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