TAIKO WAFER PROTECTING TAPE, AND TAIKO WAFER PROCESSING METHOD
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机译:太鼓晶片保护带及太子晶片加工方法
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摘要
PROBLEM TO BE SOLVED: To provide a TAIKO wafer protecting tape, which is adhered at the time of performing an electroless plating treatment to a TAIKO wafer polished only at an inner side region while leaving a periphery, and a TAIKO wafer processing method using said TAIKO wafer protecting tape.SOLUTION: A TAIKO wafer protecting tape is applied to a TAIKO wafer which has been polished only at the region of an inner side while leaving a periphery, thereby to protect the TAIKO wafer at an electroless plating treatment time. The TAIKO wafer protecting tape is composed of a substrate and an adhesive layer formed on one face of the substrate. The substrate has a 5% tension strength of 60 MPa or less, and a water vapor permeability measured by the Lyssy method conforming to JIS K7129 is 3 g/mday or less.SELECTED DRAWING: None
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机译:解决的问题:提供一种在进行化学镀覆处理时仅在内侧区域抛光而离开周边的TAIKO晶片上进行化学镀处理时粘合的TAIKO晶片保护带,以及使用该TAIKO的TAIKO晶片处理方法晶圆保护带。解决方案:将TAIKO晶圆保护带应用于仅在内侧区域抛光但留有周边的TAIKO晶圆,从而在化学镀处理时保护TAIKO晶圆。 TAIKO晶片保护带由基底和形成在基底的一个面上的粘合层组成。基材的5%拉伸强度为60 MPa或更小,通过符合JIS K7129的Lyssy方法测得的水蒸气渗透率为3 g / mday或更小。
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