首页> 外国专利> Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer

Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer

机译:用于保护半导体晶片表面的胶带和用于处理半导体晶片的方法

摘要

A pressure-sensitive adhesive tape for protecting a semiconductor wafer surface, which is used by heating and bonding at a temperature of 40 ° C. to 90 ° C. on a surface of a semiconductor wafer having an unevenness of 20 μm or more, wherein the pressure-sensitive adhesive tape for protecting a semiconductor wafer surface comprises a substrate A film, a pressure-sensitive adhesive layer, and an intermediate resin layer between the base film and the pressure-sensitive adhesive layer, wherein the thickness of the intermediate resin layer is equal to or greater than the unevenness difference, and constitutes the intermediate resin layer. Adhesive for protecting the surface of a semiconductor wafer, wherein the melting point or the Vicat softening point of the resin to be formed is 40 ° C. to 90 ° C., and the melt mass flow rate of the resin constituting the intermediate resin layer is 10 g / min to 100 g / min. Of processing a semiconductor wafer using the method.
机译:一种用于保护半导体晶片表面的压敏胶带,其通过在40℃至90℃的温度下加热并粘结在具有20μm以上的凹凸的半导体晶片的表面上而使用,用于保护半导体晶片表面的压敏胶带包括基底A膜,压敏胶粘剂层和在基膜和压敏胶粘剂层之间的中间树脂层,其中中间树脂层的厚度等于或大于凹凸差,并且构成中间树脂层。用于保护半导体晶片表面的粘合剂,其中要形成的树脂的熔点或维卡软化点为40°C至90°C,并且构成中间树脂层的树脂的熔体质量流速是10克/分钟到100克/分钟。使用该方法处理半导体晶片。

著录项

  • 公开/公告号JPWO2018181240A1

    专利类型

  • 公开/公告日2020-02-06

    原文格式PDF

  • 申请/专利权人 古河電気工業株式会社;

    申请/专利号JP20180538670

  • 发明设计人 五島 裕介;

    申请日2018-03-27

  • 分类号H01L21/304;C09J7/38;C09J7/29;C09J201;B32B27;

  • 国家 JP

  • 入库时间 2022-08-21 11:31:50

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号