In the described example, the segmented bipolar transistor (100) has at least one base metal / silicide stack that includes a base metal line that contacts a silicide layer (159) on the semiconductor surface (106) of the p base finger (140). It includes a p base on a semiconductor surface that includes a p base finger. An n + buried layer (126) is below the p-base. The collector includes an n + sinker (115) that includes a collector finger having a collector metal / silicide stack that includes a collector metal line that contacts a silicide layer on the semiconductor surface of the collector finger and extends from the semiconductor surface to the n + buried layer. The N + emitter (150) has at least one emitter finger that includes an emitter metal / silicide stack that contacts a silicide layer (159) on the semiconductor surface of the emitter finger. The emitter metal / silicide stack and / or collector metal / silicide stack includes segmentation with gaps (150c) that cut through the metal lines and / or silicide layers of the stack.
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机译：在所描述的示例中，分段双极晶体管（100）具有至少一个贱金属/硅化物堆叠，其包括与p基极指（140）的半导体表面（106）上的硅化物层（159）接触的贱金属线。 。它在包括p基极指的半导体表面上包括p基。 n +埋层（126）在p基极下方。集电极包括n +沉降片（115），其包括具有集电极金属/硅化物叠层的集电极指，该集电极金属/硅化物堆叠包括与集电极指的半导体表面上的硅化物层接触并从半导体表面延伸至n的集电极金属线。 +埋层。 N +发射极（150）具有至少一个发射极指，该发射极指包括与发射极指的半导体表面上的硅化物层（159）接触的发射极金属/硅化物堆叠。发射极金属/硅化物叠层和/或集电极金属/硅化物叠层包括具有间隙（150c）的分段，所述间隙穿过该叠层的金属线和/或硅化物层。
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