Analysis of the self-heating effect in the pair of the comlementary vertical bipolar NPN and PNP transistors of the numerical simulation method

摘要

In this article, we consider the numerical analysis of the influence of the self-heating effect on the parameters of the complementary vertical bipolar transistors fabricated in bipolar technology classic with the p-epitaxy. As a result of investigations, it was determined that for such structures, the effect of self-heating is negligible and therefore it cannot be taken into account when designing an IC with similar components.