机译:3 MeV质子辐照的NPN双极结型晶体管辐射缺陷的演变
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China|Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China|Chinses Acad Sci, Inst Microelect, Beijing 100029, Peoples R China;
Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China;
Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Heilongjiang, Peoples R China;
Proton irradiation; Combined irradiation; Deep level transient spectroscopy; Bipolar junction transistor;
机译:3-MeV质子辐照的PNP双极结晶体管的辐射缺陷和退火研究
机译:温度和1 MeV质子辐照对体硅(npn)发射极-基极双极结发光的影响分析
机译:各种能量的硅离子辐照的NPN双极结型晶体管的辐射损伤和缺陷
机译:2-MeV电子辐照在npn Si双极晶体管中辐射诱导的晶格缺陷的剂量率依赖性和性能下降
机译:RF 4H-碳化硅npn双极结晶体管的设计,分析和实验研究。
机译:5 MeV质子辐射对氮化SiO2 / 4H-SiC MOS电容的影响及相关机制
机译:中子和γ辐照下商用NpN双极结晶体管的电学特性