METHOD FOR FABRICATING A DEVICE WITH A TENSILE-STRAINED NMOS TRANSISTOR AND A UNIAXIAL COMPRESSION STRAINED PMOS TRANSISTOR

摘要

Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphisation recrystallisation then germanium condensation.