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Tensile-Strained GeSn Metal-Oxide-Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

机译：使用固相外延在Si（111）上拉伸应变的GeSn金属氧化物半导体场效应晶体管器件

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status: published

机译：状态：已发布

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Lieten Ruben; Maeda Tatsuro; Jevasuwan Wipakorn; Hattori Hiroyuki; Uchida Noriyuki; Miura Shu; Tanaka Masatoshi; Locquet Jean-Pierre;
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年度 2013
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正文语种 eng
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1. Tensile-Strained GeSn Metal-Oxide-Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy [J] . Ruben R. Lieten, Tatsuro Maeda, Wipakom Jevasuwan, _Applied Physics Express . 2013,第10期

机译：使用固相外延在Si（111）上拉伸应变的GeSn金属氧化物半导体场效应晶体管器件
2. Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C_7H_x implantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal-oxide-semiconductor field-effect transistor [J] . Tadashi Yamaguchi, Yoji Kawasaki, Tomohiro Yamashita, Japanese journal of applied physics . 2015,第3期

机译：n沟道金属氧化物半导体场效应晶体管的级联C_7H_x注入后快速固相外延和激光退火形成的低应变碳掺杂源极/漏极的高应变沟道
3. Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb_2O_3-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness [J] . Ching-Wei Lee, Yung-Hsien Wu, Ching-Heng Hsieh, Applied Physics Letters . 2014,第20期

机译：固相外延形成外延GeSn膜及其在亚纳米等效氧化物厚度Yb_2O_3门控GeSn金属氧化物半导体电容器中的应用
4. Solid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices [C] . Ruben R. Lieten, Tatsuro Maeda, Jin Won Seo, High Purity and High Mobility Semiconductors 13 . 2014

机译：GeSn合金在硅上的固相外延和MOSFET器件中的集成
5. Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors. [D] . Greene, Brian Joseph. 2003

机译：硅的横向固相外延及其在金属氧化物半导体场效应晶体管制造中的应用。
6. Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry [O] . Sigal Trattner, Bin Cheng, Radoslaw L. Pieniazek, -1

机译：使用固态金属氧化物半导体场效应晶体管剂量法从计算机断层扫描估计有效剂量的样本量要求
7. Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility [O] . Yan Liu, Jing Yan, Hongjuan Wang, 2015

机译：具有有效空穴迁移率的应变锗锡（GeSn）P沟道金属氧化物半导体场效应晶体管

Tensile-Strained GeSn Metal-Oxide-Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

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