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Method of Forming a CMOS Device with a Stressed-Channel NMOS Transistor and a Strained-Channel PMOS Transistor
Method of Forming a CMOS Device with a Stressed-Channel NMOS Transistor and a Strained-Channel PMOS Transistor
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机译:具有应力通道NMOS晶体管和应变通道PMOS晶体管的CMOS器件的形成方法
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摘要
A method of forming stressed-channel NMOS transistors and strained-channel PMOS transistors forms p-type source and drain regions before an n-type source and drain dopant is implanted and a stress memorization layer is formed, thereby reducing the stress imparted to the n-channel of the PMOS transistors. In addition, a non-conductive layer is formed after the p-type source and drain regions are formed, but before the n-type dopant is implanted. The non-conductive layer allows shallower n-type implants to be realized, and also serves as a buffer layer for the stress memorization layer.
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