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Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor
Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor
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机译:具有拉伸应变的nmos晶体管和单轴压缩应变的pmos晶体管的器件的制造方法
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摘要
Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphization recrystallization then germanium condensation.
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