Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method

摘要

Degradation in nMOS transistors from gate oxide shorts is dependent upon oxide trapping and interface state generation. Three distinct damage mechanisms were identified, including generation of: (1) electron traps in the bulk oxide by the injected holes, N(sub ox,h), (2) electron traps in the bulk oxide by the injected electrons, N(sub ox,e), and (3) interface states, N(sub ss). The three damage mechanisms are incorporated into a device lifetime prediction method.