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Aligned carbon nanotubes for use in high performance field effect transistors
Aligned carbon nanotubes for use in high performance field effect transistors
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机译:用于高性能场效应晶体管的取向碳纳米管
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摘要
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
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