Current on/off ratio enhancement through the electrical burning process in ambient with/without oxygen for the generation of high-performance aligned single-walled carbon nanotube field effect transistors

摘要

We present characteristics of the electrical burning process with/without oxygen-ambient for parallel aligned single-walled carbon nanotube field effect transistors (SWNT-FETs). High selectivity of metallic and semiconducting nanotubes is demonstrated by an electrical burning process through partial etching of the atomic layer deposited Al_2O_3 layer beneath the gate electrodes. Metallic nanotubes exposed to oxygen show electrical breakdown during the burning process, resulting in the SWNT-FETs having excellent performance. Specifically, 100 μm source/drain width p-type aligned SWNT-FETs through electrical burning with local oxidation show high I_(on)/I_(off) ratios (>10~3), 10 μS at a drain bias of -1 V and -100 μA at a reverse gate bias of -8 V.