首页> 外国专利> Vertical light emitting diode with photonic nanostructures and method of fabrication thereof

Vertical light emitting diode with photonic nanostructures and method of fabrication thereof

机译:具有光子纳米结构的垂直发光二极管及其制造方法

摘要

There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles.
机译:提供了一种制造垂直发光二极管的方法,该方法包括形成发光二极管结构。形成发光二极管结构包括:形成第一导电类型的第一材料层;形成第二导电类型的第二材料层;在第一材料层和第二材料层之间形成发光层;以及形成多个第一材料层的表面上通常排列有序的光子纳米结构,从发光层产生的光通过该第一纳米层发射,以增强垂直发光二极管的光提取效率。特别地,形成多个总体上有序的光子纳米结构包括在第一材料层的表面上形成包括总体上有序的纳米颗粒的自组装模板,以用作在第一材料层的所述表面上形成光子纳米结构的掩模。还提供了具有自组装衍生的有序纳米粒子的垂直发光二极管。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号