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Light extraction by photonic crystals in vertical thin-film IndiumGalliumNitride light-emitting diodes.

机译:垂直薄膜氮化铟镓发光二极管中的光子晶体提取光。

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摘要

Light extraction technologies, such as surface roughening, chip shaping, or photonic crystal (PhC) patterning, are an integral part of any semiconductor light-emitting diode (LED). Among these, PhC patterning is unique in both its mechanism and its effects. Because PhC extraction relies on diffraction rather than random scattering, it can be used not only to increase extraction efficiency but also to control the directionality of the emitted light.;Harnessing the full potential of PhC extraction requires a thorough understanding of the roles of numerous design parameters. In general, the optimal parameters for PhC extraction depend heavily on the geometry of the LED chip. In this work, we explore the use of photonic crystals in n-side-up vertical thin-film InGaN LEDs fabricated by flip-chip bonding and laser lift-off.;The impact of cavity thickness on the extraction and absorption of guided optical modes is studied in detail. Contrary to expectations, the modal extraction efficiencies are found to be almost independent of the LED thickness. This result is supported by simulations, which indicate that the balance between PhC extraction and metal absorption at the Ag-based backside mirror remains relatively constant as the structure is thinned from several microns to several hundred nanometers.;The impact of the vertical layer structure on the emission directionality is also explored. We demonstrate that the directionality of an 800-nm-thick PhC LED can be tuned by varying only the etch depth of the photonic crystal. This dependence is shown to arise from preferential excitation of a subset of the available guided modes. This technique is utilized to achieve an emission pattern comprised of only two diffracted modes.;Finally, we demonstrate thin-film PhC LEDs exhibiting a large enhancement in extraction efficiency and strongly directional emission. In contrast to conventional wisdom, we show that the strong directionality exhibited by these devices arises in part from the availability of multiple diffraction orders. Relative to unpatterned LEDs on the same sample, these PhC LEDs yield an enhancement of 5.3 times in the vertical output power emitted into an aperture with a half-angle of 20 degrees.
机译:光提取技术,例如表面粗糙化,芯片成形或光子晶体(PhC)图案化,是任何半导体发光二极管(LED)不可或缺的一部分。其中,PhC图案在其机理和效果上都是独一无二的。由于PhC提取依赖于衍射而不是随机散射,因此它不仅可以用于提高提取效率,而且可以控制发射光的方向性;要充分利用PhC提取的全部潜力,需要对多种设计的作用有透彻的了解参数。通常,用于PhC提取的最佳参数在很大程度上取决于LED芯片的几何形状。在这项工作中,我们探索了光子晶体在通过倒装芯片键合和激光剥离制造的n面朝上垂直InGaN薄膜LED中的使用;腔厚度对引导光学模式的提取和吸收的影响详细研究。与预期相反,发现模态提取效率几乎与LED厚度无关。该结果得到了仿真的支持,该仿真表明,当结构从几微米变薄到几百纳米时,Ag基背面镜的PhC提取和金属吸收之间的平衡保持相对恒定。还探讨了排放方向性。我们证明了可以通过仅改变光子晶体的蚀刻深度来调整800nm厚的PhC LED的方向性。该依赖性显示为源自可用引导模式的子集的优先激发。利用该技术可实现仅包含两个衍射模式的发射模式。最后,我们证明了薄膜PhC LED在提取效率和强方向性发射方面表现出很大的提高。与传统观点相反,我们表明这些设备展现出的强方向性部分源于多个衍射级的可用性。相对于同一样品上的无图案LED,这些PhC LED产生的垂直输出功率向发射到20度半角光阑中的垂直输出功率提高了5.3倍。

著录项

  • 作者

    Rangel, Elizabeth Ann.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Engineering Electronics and Electrical.;Physics Optics.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 156 p.
  • 总页数 156
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:44:26

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