Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes

摘要

An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO{sub}2/SiO{sub}2 omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC.