机译:嵌入光子晶体的SiC衬底基倒装芯片垂直发光二极管的光提取效率分析
Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China|Qilu Normal Univ, Sch Phys & Elect Engn, Jinan 250200, Peoples R China;
Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China;
Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China;
Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China;
Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China;
Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China;
机译:具有深孔非晶光子晶体结构的GaN基发光二极管的光提取效率分析
机译:使用p侧深孔光子晶体提高GaN基薄膜倒装芯片LED的垂直光提取效率
机译:用SiO2光子晶体提高发光二极管光提取效率
机译:增强薄膜Ingan / GaN光子晶体发光二极管的垂直提取效率
机译:垂直薄膜氮化铟镓发光二极管中的光子晶体提取光。
机译:光子晶体倒装芯片发光二极管的调制带宽和光提取效率的研究
机译:反射光子晶体p接触层的反射率,用于提高基于AlGaN基深紫外发光二极管的光提取效率