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Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow
Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow
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机译:使用替代金属栅极工艺流程将机电和CMOS器件集成到生产线的前端
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摘要
Semiconductor devices and methods are provided for integrally forming electromechanical devices (e.g. MEMS or NEMS devices) with CMOS devices in a FEOL (front-end-of-line) structure as part of a replacement metal gate process flow. For example, a method includes forming an electromechanical device in a first device region of a substrate and forming a transistor device in a second device region of the substrate. The electromechanical device includes a sacrificial anchor structure and a sacrificial cantilever structure formed of a sacrificial material. The transistor device includes a sacrificial gate electrode structure formed of the sacrificial material. A replacement metal gate process is performed to replace the sacrificial gate electrode structure of the transistor device with a metallic gate electrode, and to replace the sacrificial anchor structure and the sacrificial cantilever structure with a metallic anchor structure and a metallic cantilever structure. A release process is performed to release the metallic cantilever structure.
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