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Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure
Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure
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机译:集成原子层沉积工艺和置换栅结构的纳米片CMOS器件的制造方法
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摘要
A semiconductor device including a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer may include a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of the suspended channel structures. The inner spacer may include a crescent shape with a substantially central seam.
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