MANUFACTURING METHOD FOR A FINFET, FINFET AND DEVICE COMPRISING A FINFET

摘要

A method of manufacturing a fin field effect transistor (finFET) is described, the method comprising the steps of:- providing a substrate with a semiconductor layer of a first material;- removing portions of the semiconductor layer to form a fin of the first material and a trench;- growing alternating layers of the first material and a second material in the trench adjacent the fin;- removing portions of the alternating layers to form a lateral fin adjacent to the fin, the lateral fin comprising a stack comprising alternating portions of the first material and portions of the second material;- removing the portions of second material so as to obtain a fin structure comprising the fin and one or more lateral fin portions formed by the portions of the first material.