FINFET FINFET FINFET FINFET DEVICE AND METHOD OF FORMING AND MONITORING QUALITY OF THE SAME

摘要

Disclosed are an FinFET structure having a gate structure including two notch pitchers and a method for forming the same. The method of forming the same includes: a step of forming multiple fins supported by a substrate; a step of forming a gate layer on the fin; and a step of etching the gate layer by plasma etching by using etching gas to form a gate with the two notch pitchers. The etching gas is supplied at a ratio of a flow rate of a center area of the substrate to the flow rate of a peripheral area of the substrate, in a range of 0.2-1. The present invention provides a method for monitoring quality of an FinFET device. The method for monitoring quality of an FinFET device includes: a step of measuring a profile of the notch pitcher; and a step of obtaining the quality of the FinFET device by comparing the profile of the notch pitcher with a predetermined standard.