Numerical simulation on novel FinFETs: asymmetric poly-silicon gate FinFETs and TiN gate FinFETs

摘要

We report our numerical study on the device performance of an asymmetric poly-silicon gate FinFET and FinFET with TiN metal gate structure. Our numerical simulation revealed that the asymmetric poly-silicon FinFET structure and TiN gate FinFET structures exhibit superior V_T tolerance over the conventional FinFET structure with respect to the variation of fin thickness. For instance, the V_T tolerance of the asymmetric poly-Si FinFET were 0.02 V while TiN gate FinFET exhibited 0.015 V tolerance for the variation of the fin thickness of 5 nm (from 30 to 35 nm) while the conventional FinFET demonstrates 0.12 V fluctuation for the same variation of the fin thickness. Our numerical simulation further revealed that the threshold voltage (V_T) can be controlled within the range of -0.1 ～ +0.5 V through varying the doping concentration of the asymmetric poly-silicon gate region from 1.0 × 10~(18) to 1.0 × 10~(20) cm~(-3).