Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

摘要

＜正＞Dear editor,High k/metal gate （HKMG） stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor（CMOS） technology [1]. In the HKMG stack, titanium nitride （TiN） is observed to play an important role as a work-function metal and an HK