FINFET FINFET FINFET FINFET DEVICE AND METHOD OF FORMING AND MONITORING QUALITY OF THE SAME

摘要

A FinFET structure having a gate structure with two notch features and a method of forming the same are disclosed. The method includes forming a plurality of fins supported by a substrate; Depositing a gate layer on the pin; And etching the gate layer by plasma etching with an etching gas to form a gate having two notch features. The etching gas is supplied at a ratio of the flow rate in the central region of the substrate to the flow rate in the peripheral region of the substrate in the range of 0.2 to 1. The present disclosure provides a method of monitoring the quality of a FinFET device, the method comprising: measuring a profile of a notch feature; And comparing the profile of the notch feature with a predetermined criterion to obtain the quality of the FinFET device.