MATERIAL FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD

摘要

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),wherein R¹ represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R² independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R² represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m² is independently an integer of 0 to 7, provided that at least one m² is an integer of 1 to 7, and each q is independently 0 or 1.