High voltage ESD device for finfet technology

摘要

An ESD protection device includes a semiconductor substrate, first and second fins, first and second doped regions adjacent to each other and having different conductivity types. The first doped region includes a first portion of the substrate and a first region of the first fin. The second doped region includes a second portion of the substrate and a second region of the first fin. The device also includes a first gate structure on a portion of first and second regions of the first fin, a first highly doped region in the first region of the first fin and having a same conductivity type as the first doped region, and a dopant concentration higher than the first doped region, and a second highly doped region in the second fin and having a same conductivity type as the second doped region, and a dopant concentration higher than the second doped region.