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Method for Vertical Gate-Last Process in the Fabrication of Vertical Nanowire MOSFETs
Method for Vertical Gate-Last Process in the Fabrication of Vertical Nanowire MOSFETs
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机译:垂直纳米线MOSFET制造中的垂直栅最后工艺的方法
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摘要
The fabrication of vertical nanowire MOSFETs is considered using a gate-last process. The top ohmic electrode is fabricated first and can be used as a mask to form gate recesses using etching techniques. Thereafter, a gate is formed to allow a high degree of reduction in access resistance.
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