METHOD FOR ETCHING A TRENCH IN FABRICATION A VERTICAL MOSFET DEVICE, CAPABLE OF SIMPLIFY THE FABRICATION PROCESS BY ETCHING THE TRENCH

摘要

PURPOSE: A method for etching a trench in fabrication a vertical MOSFET device is provided to simplify the fabrication process without a hard mask by etching a semiconductor substrate exposed by photoelectrochemistry reaction and forming a trench.;CONSTITUTION: A photoresist mask(202) on a semiconductor substrate(200) is patterned so that a trench forming region is exposed on a semiconductor substrate. A mixing solution is applied on the upper part of the semiconductor substrate. A negative electrode(206) is connected to the mixture solution and a positive electrode(204) is connected to the lower part of the semiconductor substrate. Voltage is applied to a resultant product. Ultra violet radiates on the upper part of the semiconductor substrate to which the voltage is applied. The semiconductor substrate of the trench forming region exposed by photoelectrochemistry reaction is etched. The mixture solution is the mixture of hydrogen peroxide(H2O2) and hydrofluoric acid(HF).;COPYRIGHT KIPO 2010