METHOD FOR FORMING TRENCH AND SEMICONDUCTOR DEVICE FABRICATION METHOD USING THE SAME WITH FIRST AND SECOND ETCHING PROCESS

摘要

PURPOSE: A method for forming a trench and a semiconductor device fabrication method using the same are provided to form a desired metal line, a desired isolation layer, and a desired contact by extending a trench having the first dimension. CONSTITUTION: An insulating layer(55) is formed on a surface of a substrate(50). A photoresist pattern is formed on an upper surface of the insulating layer. A trench(65) having the first dimension on the insulating layer is formed by performing the first etch process using the photoresist pattern. The insulating layer including the trench is etched by performing the second etch process. An extended trench having the second dimension is formed by etching the insulating layer including the trench.