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Power Semiconductor Devices & IC's, 2009. ISPSD 2009
Power Semiconductor Devices & IC's, 2009. ISPSD 2009
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1.
Evaluation of oscillatory phenomena in reverse operation for High Voltage Diodes
机译:
高压二极管反向操作中的振荡现象评估
作者:
Nakamura K.
;
Iwanaga H.
;
Okabe H.
;
Saito S.
;
Hatade K.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
cathodes;
diodes;
power electronics;
recovery;
space charge;
cathode side affects;
high voltage freewheeling diodes;
hole velocity;
oscillatory phenomena;
relaxing electric field effect;
reverse recovery softness;
soft recovery performance;
space charge region;
2.
A vertical SiC JFET with a monolithically integrated JBS diode
机译:
具有单片集成JBS二极管的垂直SiC JFET
作者:
Sheng K.
;
Radhakrishnan R.
;
Zhang Y.
;
Zhao J.H.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
junction gate field effect transistors;
monolithic integrated circuits;
power electronics;
semiconductor diodes;
silicon compounds;
wide band gap semiconductors;
SiC;
circuit integrity;
circuit reliability;
device conduction loss;
integrated switch;
monolithically integrated diode;
power electronic applications;
power switch;
reverse-parallel diode;
vertical JFET;
3.
On the static performance of the RESURF LDMOSFETS for power ICs
机译:
用于功率IC的RESURF LDMOSFETS的静态性能
作者:
Iqbal M.M.-H.
;
Udrea F.
;
Napoli E.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
power integrated circuits;
1D analytical models;
2D numerical simulations;
RESURF LDMOSFETS;
breakdown voltage;
power ICs;
4.
Experimental demonstration of a vertical LOCOS Insulated Base Transistor
机译:
垂直LOCOS绝缘基极晶体管的实验演示
作者:
Sweet M.
;
Narayanan E.
;
Moens P.
;
Desoete B.
;
Vershinin K.
;
Li Juin Yip
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
BiCMOS integrated circuits;
MOSFET;
bipolar transistors;
cathodes;
BiCMOS process;
MOSFET equivalents;
cathode cell structure;
saturation current level;
vertical LOCOS insulated base transistor;
voltage 85 V;
5.
Dynamic punch-through design of high-voltage diode for suppression of waveform oscillation and switching loss
机译:
高压二极管的动态穿通设计,可抑制波形振荡和开关损耗
作者:
Tsukuda M.
;
Sakiyama Y.
;
Ninomiya H.
;
Yamaguchi M.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
p-i-n diodes;
switching;
PIN-diode;
cathode side;
electron injection;
low-current operation;
punch-through position;
surge voltage;
switching loss;
6.
Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with ‘ribbon’ gate and source contacts layouts
机译:
采用“带状”栅极和源极触点布局,改善了块状和SOI衬底上nLDMOSFET的射频功率性能
作者:
Fournier D.
;
Ducatteau D.
;
Fontaine J.
;
Scheer P.
;
Bon O.
;
Rauber B.
;
Buczko M.
;
Gloria D.
;
Gaquiere C.
;
Chevalier P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
microwave transistors;
RF power performance;
SOI substrates;
Si;
bulk substrates;
gate resistance;
nLDMOSFET;
power added efficiency;
ribbon gate;
source contacts layouts;
7.
TAC-IGBT: An improved IGBT structure
机译:
TAC-IGBT:改进的IGBT结构
作者:
Zehong Li
;
Mengliang Qian
;
Bo Zhang
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
current density;
insulated gate bipolar transistors;
isolation technology;
IGBT structure;
TAC-IGBT;
accumulation channel;
gate charge;
latching current density;
on-state voltage drop;
trench accumulation layer controlled insulated gate bipolar transistor;
trench insulated gate bipolar transistors;
8.
A field-plated drift-length scalable EDPMOS device structure
机译:
场镀漂移长度可扩展EDPMOS器件结构
作者:
Letavic T.
;
Sharma S.
;
Cook R.
;
Brock R.
;
Gondal A.
;
Mandhare C.
;
van Noort W.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MIS devices;
buried silicon junction;
p-channel extended drain MOS device;
surface field plate;
voltage 35 V to 80 V;
9.
Investigation of correlation between device structures and switching losses of IGBTs
机译:
器件结构与IGBT开关损耗之间的相关性研究
作者:
Machida S.
;
Sugiyama T.
;
Ishiko M.
;
Yasuda S.
;
Saito J.
;
Hamada K.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
device structures;
switching losses;
switching power dissipation;
10.
4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield
机译:
4H-SiC双极结型晶体管:从研究到开发-案例研究:1200 V,20 A,稳定的SiC BJT,具有高阻断率
作者:
Qingchun Zhang
;
Burk A.
;
Husna F.
;
Callanan R.
;
Agarwal A.
;
Palmour J.
;
Stahlbush R.
;
Scozzie C.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
current density;
dislocations;
leakage currents;
power bipolar transistors;
silicon compounds;
wide band gap semiconductors;
BJTs;
SiC;
basal plane dislocations;
blocking yield;
current 20 A;
current densities;
electrical stress;
leakage current;
power bipolar junction transistor;
voltage 1200 V;
voltage 1800 V;
11.
Keyword index
机译:
关键字索引
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
12.
730V, 34mΩ-cm
2
lateral epilayer RESURF GaN MOSFET
机译:
730V,34mΩ-cm
2 sup>横向外延层RESURF GaN MOSFET
作者:
Huang W.
;
Chow T.P.
;
Niiyama Y.
;
Nomura T.
;
Yoshida S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
MOSFET;
gallium compounds;
semiconductor device breakdown;
semiconductor epitaxial layers;
wide band gap semiconductors;
GaN;
breakdown voltage;
lateral epilayer RESURF;
n-channel GaN epilayer;
size 16 mum;
size 4 mum;
specific on-resistance;
voltage 730 V;
13.
Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation
机译:
在70 A以上工作的Si衬底上的增强模式GaN混合MOS-HFET
作者:
Kambayashi H.
;
Satoh Y.
;
Niiyama Y.
;
Kokawa T.
;
Iwami M.
;
Nomura T.
;
kato S.
;
Chow T.P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
MOSFET;
aluminium compounds;
gallium compounds;
high electron mobility transistors;
AlGaN-GaN;
Si;
breakdown voltage;
hybrid MOS-HFET;
maximum drain current;
on-state resistance;
power switching applications;
size 340 mm;
threshold voltage;
14.
High voltage SOI P-channel field MOSFET structures
机译:
高压SOI P沟道场效应MOSFET结构
作者:
Lu D.H.
;
Mizushima T.
;
Sumida H.
;
Saito M.
;
Nakazawa H.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
elemental semiconductors;
isolation technology;
semiconductor device breakdown;
silicon;
silicon-on-insulator;
SOI P-channel field MOSFET structures;
Si;
field oxide Pch MOST;
high blocking capability;
high voltage;
isolation trench;
layout;
minimum overhead area;
off-state breakdown voltage;
on-state breakdown voltage;
source-centered single trench structure;
thick film SOI technology;
15.
Combined Lateral Vertical RESURF (CLAVER) LDMOS structure
机译:
横向组合垂直RESURF(CLAVER)LDMOS结构
作者:
Khan T.
;
Khemka V.
;
Ronghua Zhu
;
Weixiao Huang
;
Xu Cheng
;
Hui P.
;
Muh-ling Ger
;
Grote B.
;
Rodriquez P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MIS devices;
power integrated circuits;
combined lateral vertical RESURF LDMOS;
integrated smartpower technology;
voltage 150 V;
16.
FREEDM System: Role of power electronics and power semiconductors in developing an energy internet
机译:
FREEDM系统:电力电子和电力半导体在发展能源互联网中的作用
作者:
Huang A.Q.
;
Baliga J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
Internet;
gallium compounds;
power semiconductor devices;
silicon compounds;
energy internet;
future renewable electric energy delivery and management systems;
power electronics;
power semiconductors;
17.
Title page
机译:
封面
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOS integrated circuits;
high electron mobility transistors;
insulated gate bipolar transistors;
junction gate field effect transistors;
low-power electronics;
power MOSFET;
power integrated circuits;
power transistors;
silicon-on-insulator;
wide band gap semiconductors;
BJT;
DMOS technology;
HEMT;
IGBT;
JFET;
SOI power devices;
high voltage IC technology;
high voltage diodes;
low voltage devices;
power semiconductor technology;
smart power technologies;
superjunction;
wide band gap semiconductor devices;
18.
Releasing new power semiconductor technology: The start-up company route
机译:
发布新的功率半导体技术:创业公司路线
作者:
Amaratunga G.A.J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power semiconductor devices;
venture capital;
power electronics;
power management;
power semiconductor technology;
semiconductor IC company;
19.
Copyright
机译:
版权
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
20.
30V High-side N-channel Lateral Trench MOSFET
机译:
30V高侧N沟道横向沟道MOSFET
作者:
Disney D.
;
Chan W.
;
Lam R.
;
Blattner R.
;
Ma S.
;
Seng W.
;
Jun-Wei Chen
;
Williams R.K.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOS integrated circuits;
isolation technology;
ModularBCD technology;
half-bridge level-shifter;
high-side N-channel lateral trench MOSFET;
integrated floating high-side drive circuitry;
isolation;
size 0.35 mum;
voltage 30 V;
21.
Development of a 100 kVA SiC inverter with high overload capability of 300 kVA
机译:
开发具有300 kVA高过载能力的100 kVA SiC逆变器
作者:
Sugawara Y.
;
Ogata S.
;
Izumi T.
;
Nakayama K.
;
Miyanagi Y.
;
Asano K.
;
Tanaka A.
;
Okada S.
;
Ishi R.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
invertors;
power semiconductor devices;
silicon compounds;
SiC;
apparent power 100 kVA;
apparent power 110 kVA;
apparent power 300 kVA;
high-overload capability;
overload inverter;
time 150 h;
time 3 s;
22.
Design and process considerations for 1200V HVIC technology
机译:
1200V HVIC技术的设计和工艺注意事项
作者:
Yongcheol Choi
;
Changki Jeon
;
Minsuk Kim
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power integrated circuits;
HVIC technology;
LDMOS structure;
LDMOS technology;
breakdown measurement;
process considerations;
rugged breakdown characteristics;
stable breakdown voltage;
voltage 1200 V;
voltage 1400 V;
voltage 600 V;
23.
On the formation of stationary destructive cathode-side filaments in p
+
-n
−
-n
+
diodes
机译:
关于p
+ inf> -n
- inf> -n
+ sup>二极管中固定的破坏性阴极侧灯丝的形成
作者:
Baburske R.
;
Heinze B.
;
Niedernostheide F.-J.
;
Lutz J.
;
Silber D.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
avalanche diodes;
semiconductor optical amplifiers;
SOA;
current filaments;
diodes;
dynamic avalanche;
plasma-front dynamics;
stationary destructive cathode-side filaments;
24.
4-kV 100-Mbps monolithic isolator on SOI with multi-trench isolation for wideband network
机译:
SOI上具有多沟槽隔离的4kV 100-Mbps单片隔离器,用于宽带网络
作者:
Hashimoto T.
;
Yuyama Y.
;
Amishiro M.
;
Nemoto M.
;
Yukutake S.
;
Kojima Y.
;
Kanekawa N.
;
Takeuchi Y.
;
Watanebe A.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
broadband networks;
isolation technology;
silicon-on-insulator;
monolithic isolator;
multiple trench isolation;
polysilicon resistors;
silicon on insulator;
voltage 2.4 kV to 4 kV;
wideband network;
25.
Non-destructive current measurement for surface mounted power MOSFET on VRM board using magnetic field probing technique
机译:
使用磁场探测技术测量VRM板上表面安装功率MOSFET的无损电流
作者:
Ikeda Y.
;
Yamaguchi Y.
;
Kawaguchi Y.
;
Yamaguchi M.
;
Omura I.
;
Domon T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
calibration;
electric current measurement;
lead bonding;
micromagnetics;
power MOSFET;
board transient current;
calibration technique;
current transformer;
current waveform;
high-side power MOSFET;
loop coil structure;
micromagnetic probing technique;
nondestructive current measurement;
self-turn-on loss;
surface mounted power MOSFET;
switching loss;
wire bonding inductance;
26.
Integrated voltage reference and comparator circuits for GaN smart power chip technology
机译:
用于GaN智能功率芯片技术的集成电压基准和比较器电路
作者:
King-Yuen Wong
;
Wanjun Chen
;
Chen K.J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
Schottky diodes;
aluminium compounds;
comparators (circuits);
elemental semiconductors;
gallium compounds;
high electron mobility transistors;
power integrated circuits;
reference circuits;
silicon;
wide band gap semiconductors;
AlGaN-GaN-Si;
GaN-on-Si HEMT platform;
low power consumption;
low-voltage peripheral devices;
mixed-signal functional blocks;
monolithically integrated high-voltage power devices;
positive limiting level;
smart power chip technology;
temperature 20 degC to 250 degC;
te;
27.
Low-loss rectifier by self-driven MOSFET with gate drive voltage control circuit
机译:
通过具有栅极驱动电压控制电路的自驱动MOSFET进行的低损耗整流器
作者:
Kagawa Y.
;
Furukawa A.
;
Takeshita M.
;
Iwata A.
;
Suga I.
;
Yamakawa S.
;
Inoue M.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
CMOS integrated circuits;
MOSFET circuits;
power MOSFET;
solid-state rectifiers;
voltage control;
CMOS control circuit;
conduction loss;
diode voltage drop;
gate drive voltage control circuit;
half-wave rectification;
intrinsic body diode voltage drop;
low-loss rectifier;
self-driven MOSFET;
28.
Current-sensing power MOSFETs with excellent temperature characteristics
机译:
具有出色温度特性的电流感应功率MOSFET
作者:
Takaya H.
;
Miyagi K.
;
Hamada K.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
electric current measurement;
impurity distribution;
power MOSFET;
FITMOS;
current sense ratio;
current-sensing power MOSFET;
drift layer impurity concentration;
layer thickness;
temperature-based changes;
temperature-based sense ratio;
29.
Thermal characterization of Insulated Metal Substrates with a power test chip
机译:
带有功率测试芯片的绝缘金属基板的热特性
作者:
Jorda X.
;
Perpina X.
;
Vellvehi M.
;
Millan J.
;
Ferriz A.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
alumina;
ceramics;
modules;
printed circuit testing;
substrates;
thermal analysis;
thermal conductivity;
FR4 printed circuit board;
alumina ceramic substrate;
direct copper bonding;
high-power thermal test chips;
insulated metal substrates;
power modules;
power test chip;
self-heating;
thermal coupling;
thermal models;
thermal resistances;
30.
A chip design concept for an extremely low on-state voltage 1200V FS-IGBT/FWD with high withstand capability for the MERS configuration
机译:
一种芯片设计概念,用于极低的导通状态电压1200V FS-IGBT / FWD,具有针对MERS配置的高承受能力
作者:
Iwamuro N.
;
Yamazaki T.
;
Shiigi T.
;
Shimada R.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
integrated circuit design;
frequency 50 Hz to 60 Hz;
high voltage power semiconductor devices;
insulated gate bipolar transistor;
magnetic energy recovery switch;
switching frequency;
31.
Performance of a trench pmos gated, planar, 1.2 kV Clustered insulated gate bipolar transistor in NPT technology
机译:
NPT技术中沟槽pmos栅极,平面,1.2 kV簇状绝缘栅双极晶体管的性能
作者:
Luther-King N.
;
Sweet M.
;
Narayanan E.M.S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MIS devices;
insulated gate bipolar transistors;
MOS controlled power device;
insulated gate bipolar transistor;
trench PMOS;
voltage 1.2 kV;
32.
ISPSD'08 best paper award
机译:
ISPSD'08最佳论文奖
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
33.
Improved breakdown-voltage complementary MOSFET in a 0.18µm standard CMOS process for switch mode power supply (SMPS) applications
机译:
采用0.18µm标准CMOS工艺的改进型击穿电压互补MOSFET,用于开关电源(SMPS)应用
作者:
Jeesung Jung
;
Huang A.Q.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
CMOS analogue integrated circuits;
MOSFET circuits;
electric breakdown;
power integrated circuits;
power supply circuits;
CMOS process;
NMOS breakdown voltages;
PMOS breakdown voltages;
VLSI low-voltage CMOS;
breakdown voltage complementary MOSFET;
charge coupling;
merged-charge effect;
shallow trench isolation;
switch mode power supply;
very large scale integration;
34.
ESD protection structure with novel trigger technique for LDMOS based on BiCD process
机译:
基于BiCD工艺的LDMOS新颖触发技术的ESD保护结构
作者:
Nakamura K.
;
Naka T.
;
Matsushita K.
;
Matsudai T.
;
Yasuhara N.
;
Nakagawa A.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOS integrated circuits;
avalanche breakdown;
electrostatic discharge;
power integrated circuits;
power transistors;
BiCD process;
ESD protection structure;
LDMOS;
NPN transistor;
avalanche current;
breakdown voltage;
trigger technique;
35.
aBCD18 - An advanced 0.18um BCD technology for PMIC application
机译:
aBCD18-用于PMIC应用的先进的0.18um BCD技术
作者:
Namkyu Park
;
Jaehan Cha
;
Kyungho Lee
;
Haeung Jeon
;
Hyungsuk Choi
;
Juho Kim
;
Sungoo Kim
;
Inseok Oh
;
Eungryul Park
;
Jinyoung Chae
;
Hyunggeun Kang
;
Intaek Oh
;
Han Sub Yoon
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
BIMOS integrated circuits;
EPROM;
MIM devices;
capacitors;
isolation technology;
power integrated circuits;
resistors;
EEPROM;
MIM capacitor;
analog devices;
bipolar-CMOS-DMOS technology;
deep trench isolation process;
depth 15 mum;
poly resistor;
sidewall selective transistor;
size 0.18 mum;
36.
Impact of an LPT(II) concept with Thin Wafer Process Technology for IGBT's vertical structure
机译:
LPT(II)概念与薄晶圆工艺技术对IGBT垂直结构的影响
作者:
Nakamura K.
;
Oya D.
;
Saito S.
;
Okabe H.
;
Hatade K.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
carrier lifetime;
insulated gate bipolar transistors;
wafer-scale integration;
IGBT;
collector structure;
light punch-through;
on-state voltage;
operating junction temperature;
safety operating area capability;
silicon wafer;
snap-back phenomena;
temperature 218 K to 423 K;
thermal destruction;
thin wafer process technology;
voltage 600 V to 6500 V;
37.
The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications
机译:
双模绝缘栅晶体管(BIGT)是高功率应用的潜在技术
作者:
Rahimo M.
;
Kopta A.
;
Schlapbach U.
;
Vobecky J.
;
Schnell R.
;
Klaka S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
current density;
insulated gate bipolar transistors;
power bipolar transistors;
semiconductor device models;
BIGT design concept;
advanced reverse conducting IGBT;
bi-mode insulated gate transistor;
hard switching condition;
higher power applications;
standard RC-IGBT;
state-of-the-art two-chip IGBT-diode approach;
38.
Design and investigation of frequency capability of 15kV 4H-SiC IGBT
机译:
15kV 4H-SiC IGBT的频率能力设计与研究
作者:
Woongje Sung
;
Jun Wang
;
Huang A.Q.
;
Baliga B.J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
power semiconductor devices;
semiconductor doping;
silicon compounds;
wide band gap semiconductors;
SiC;
current enhancement layer;
drift region lifetime;
forward voltage drop;
n-channel asymmetric IGBT;
p+ substrate doping concentration;
switching power loss;
symmetric IGBT;
voltage 15 kV;
39.
Novel structures of 3.3kV 4H-SiC BJTs to reduce the Stacking Faults expansion
机译:
3.3kV 4H-SiC BJT的新型结构可减少堆垛层错扩展
作者:
Brosselard P.
;
Tournier D.
;
Banu V.
;
Jorda X.
;
Godignon P.
;
Millan J.
;
Bano E.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power bipolar transistors;
semiconductor device breakdown;
silicon compounds;
stacking faults;
wide band gap semiconductors;
BJTs;
DC stress;
Norstel epitaxied Nsup+/sup-P-Nsup-/sup-Nsup+/sup substrate;
SiC;
bipolar junction transistor;
breakdown voltage;
current 1 muA;
current gain;
edge mesa termination;
temperature 25 degC;
time 50 hour;
voltage 10 V;
voltage 3.3 kV;
40.
ISPSD'08 charitat award
机译:
ISPSD'08慈善奖
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
41.
Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V
机译:
击穿电压为1300V的增强型GaN混合MOS-HEMT
作者:
Tang K.
;
Li Z.
;
Chow T.P.
;
Niiyama Y.
;
Nomura T.
;
Yoshida S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
MOSFET;
gallium compounds;
high electron mobility transistors;
semiconductor doping;
wide band gap semiconductors;
AlGaN-GaN:Alsub2/subOsub3/sub;
AlGaN/GaN layer;
GaN hybrid MOS-HEMT;
Mg doping;
RESURF;
breakdown voltage;
dielectric isolation;
sapphire substrate;
42.
RBSOA study of high voltage SiC bipolar devices
机译:
高压SiC双极型器件的RBSOA研究
作者:
Jun Wang
;
Huang A.Q.
;
Baliga B.J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
bipolar transistors;
thyristors;
4H-SiC material quality;
SiC npn transistor;
SiC pnp transistors;
dynamic avalanche breakdown;
emitter turn-off thyristors;
high voltage SiC bipolar devices;
high voltage switching applications;
reverse biased safe operating area;
voltage 10 kV;
43.
A new junction termination technique: The Deep Trench Termination (DT
2
)
机译:
一种新的结终止技术:深沟终止(DT
2 sup>)
作者:
Theolier L.
;
Mahfoz-Kotb H.
;
Isoird K.
;
Morancho F.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
dielectric materials;
electrostatics;
leakage currents;
organic compounds;
p-n junctions;
power semiconductor diodes;
semiconductor device breakdown;
BCB;
PN diode;
benzocyclobutene;
breakdown voltage;
deep trench termination;
electrostatic potential distribution;
junction termination technique;
leakage current;
power devices;
spin-on dielectrics;
44.
A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line SMPS
机译:
一种用于高压离线SMPS栅极驱动器的新型自发电低压电源
作者:
Liu Jizhi
;
Chen Xingbi
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
integrated circuit modelling;
low-power electronics;
power integrated circuits;
switched mode power supplies;
gate-driver;
high-voltage off-line SMPS;
low-voltage logic signal;
self-generated low-voltage power supply;
voltage 14 V;
45.
Time and spatial resolved measurement and control of temperature in integrated MOS-power devices
机译:
集成式MOS功率器件的时间和空间分辨温度测量和控制
作者:
Gross M.
;
Stoisiek M.
;
Uhlig T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power MOSFET;
power integrated circuits;
integrated MOS-power devices;
large area integrated LDMOS transistors;
polysilicon gate network;
46.
Ultra-low on-resistance LDMOS implementation in 0.13µm CD and BiCD process technologies for analog power IC''s
机译:
用于模拟功率IC的0.13µm CD和BiCD处理技术中的超低导通电阻LDMOS实现
作者:
Shirai K.
;
Yonemura K.
;
Watanabe K.
;
Kimura K.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOS integrated circuits;
analogue integrated circuits;
power integrated circuits;
CMOS technology;
analog power integrated circuits;
process platform;
ultra-low on-resistance LDMOS implementation;
voltage 18 V;
voltage 25 V;
voltage 40 V;
voltage 5 V;
voltage 6 V;
voltage 60 V;
47.
Necessity of pulse hot carrier evaluation in suppressing self-heating effect for SOI smart power
机译:
脉冲热载流子评估在抑制SOI智能电源自热效应中的必要性
作者:
Nitta T.
;
Yanagi S.
;
Igarashi T.
;
Hatasako K.
;
Maegawa S.
;
Furuya K.
;
Katayama T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOS integrated circuits;
hot carriers;
power integrated circuits;
reliability;
silicon-on-insulator;
SOI LDMOS suppressing self-heating effect;
SOI smart power;
charge pumping measurement;
circuit operating temperatures;
degradation mechanism;
drain current shift;
gate pulse;
hot carrier reliability;
junction temperature;
pulse stress evaluation;
temperature 25 degC;
48.
A novel modular smart PIC technology platform for functional diversification
机译:
用于功能多样化的新型模块化智能PIC技术平台
作者:
Jun Cai
;
Szendrei L.
;
Caron D.
;
Park S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power integrated circuits;
advanced analog interfaces;
modular smart power integrated circuit technology;
49.
Bipolar Schottky rectifier: A novel two carrier Schottky rectifier based on superjunction concept
机译:
双极肖特基整流器:基于超结概念的新型两载流子肖特基整流器
作者:
Khemka V.
;
Ronghua Zhu
;
Khan T.
;
Weixiao Huang
;
Yue Fu
;
Cheng Xu
;
Hui P.
;
Muh-ling Ger
;
Rodriquez P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
Schottky diodes;
electric breakdown;
electrical conductivity;
leakage currents;
solid-state rectifiers;
2-carrier current conduction;
Schottky diode structure;
bipolar Schottky rectifier;
breakdown;
leakage current;
superjunction;
50.
Interconnect failure due to voltage and humidity in a 30V BCD technology
机译:
30V BCD技术中由于电压和湿度导致的互连故障
作者:
Disney D.
;
Blattner R.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
BIMOS integrated circuits;
integrated circuit interconnections;
bipolar-CMOS-DMOS technology;
highly-accelerated stress testing;
interconnect layers;
open-circuit failures;
voltage 30 V;
51.
Simulation studies and modeling of Short Circuit current oscillations in IGBTs
机译:
IGBT中短路电流振荡的仿真研究和建模
作者:
Milady S.
;
Silber D.
;
Pfirsch F.
;
Niedernostheide F.-J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
RC circuits;
equivalent circuits;
inductance;
insulated gate bipolar transistors;
short-circuit currents;
AC small-signal device simulation;
DC-link voltage;
IGBT;
RC oscillator;
current oscillations;
device structure;
equivalent circuit;
frequency-domain analysis;
gate biasing;
gate resistance;
parasitic inductances;
short-circuit operations;
52.
A novel driving technology for a passive gate on a Lateral-IGBT
机译:
横向IGBT上无源栅极的新型驱动技术
作者:
Terashima T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
switching;
driving technology;
lateral IGBT;
passive PMOS;
passive gate;
prototype IPD;
switching performance;
53.
HCI reliability control in HV-PMOS transistors: Conventional EDMOS vs. Dielectric RESURF and lateral field plates
机译:
HV-PMOS晶体管中的HCI可靠性控制:常规EDMOS与介电RESURF和侧场板
作者:
Perez-Gonzalez J.
;
Sonsky J.
;
Heringa A.
;
Benson J.
;
Chiang P.Y.
;
Yao C.W.
;
Sua R.Y.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
hot carriers;
CMOS technology;
EDMOS;
PMOS transistors;
dielectric resurf;
hot carrier injection lifetime;
shallow trench isolation;
voltage 20 V;
voltage 5.5 V;
54.
A 38W digital class D audio power amplifier output stage with integrated protection circuits
机译:
具有集成保护电路的38W数字D类音频功率放大器输出级
作者:
Yu Feng
;
Guowen Wei
;
Wai Tung Ng
;
Sugimoto T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
CMOS integrated circuits;
bootstrap circuits;
harmonic distortion;
power amplifiers;
protection;
HV-CMOS technology;
bootstrap diodes;
bridge-tied load;
gate drivers;
integrated digital class D audio power amplifier output stage;
integrated protection circuits;
open loop configuration;
55.
600V trench-gate IGBT with Micro-P structure
机译:
具有Micro-P结构的600V沟槽栅极IGBT
作者:
Nakano H.
;
Onozawa Y.
;
Kawano R.
;
Yamazaki T.
;
Seki Y.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
oscillations;
inverter operation;
low noise;
low power dissipation;
microP structure;
on-Eoff trade-off relationship;
oscillation free turn-off;
trench-gate IGBT;
urn-on di/dt controllability;
voltage 600 V;
EMI noise;
Floating p-base layer;
Turn-off oscillation;
Turn-on di/dt controllability;
56.
Determination of transient transistor capacitances of high voltage MOSFETs from dynamic measurements
机译:
通过动态测量确定高压MOSFET的瞬态晶体管电容
作者:
Hoch V.
;
Petzoldt J.
;
Jacobs H.
;
Schlogl A.
;
Deboy G.
会议名称:
《》
|
2009年
关键词:
MOSFET;
capacitance;
commutation;
power integrated circuits;
channel current;
commutation circuit;
high voltage MOSFET;
output capacitance current;
switching losses;
transient transistor capacitances;
57.
Optically-activated gate control of power semiconductor device switching dynamics
机译:
功率半导体器件开关动力学的光激活栅极控制
作者:
Mazumder S.K.
;
Sarkar T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power semiconductor devices;
switching;
gate excitation;
intensity modulation;
optically-activated gate control;
optically-triggered power transistor;
power semiconductor device;
switching dynamics;
width modulation;
58.
Conference committees
机译:
会议委员会
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
59.
The 3.3kV Semi-SuperJunction IGBT for increased cosmic ray induced breakdown immunity
机译:
3.3kV半超结IGBT,提高了宇宙线感应的击穿抗扰度
作者:
Antoniou M.
;
Udrea F.
;
Bauer F.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
cosmic ray induced breakdown immunity;
insulated gate bipolar transistor;
superjunction;
voltage 3.3 kV;
voltage 6.5 kV;
voltage 600 V to 1 kV;
Cosmic Ray;
IGBT;
60.
High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates
机译:
硅基板上带有场板的高功率AlGaN / GaN MIS-HFET
作者:
Ikeda N.
;
Kaya S.
;
Jiang Li
;
Kokawa T.
;
Masuda M.
;
Katoh S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
aluminium compounds;
buffer layers;
gallium arsenide;
gallium compounds;
high electron mobility transistors;
power field effect transistors;
semiconductor device breakdown;
semiconductor device models;
AlGaN-GaN-Si;
Si;
breakdown voltage;
conductive silicon substrate;
drain current;
field-plate structure;
high-power MIS-HFET fabrication;
high-resistive carbon doped buffer layers;
semiconductor device characteristics;
size 340 mm;
size 4 inch;
specific on-resistance;
voltage 1730 V;
61.
New self-controlled and self-protected IGBT based integrated switch
机译:
新型基于自我控制和自我保护的IGBT集成开关
作者:
Capy F.
;
Laur J.P.
;
Breil M.
;
Richardeau F.
;
Brunet M.
;
Imbernon E.
;
Bourennane A.
;
Caramel C.
;
Austin P.
;
Sanchez J.L.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power semiconductor switches;
switching convertors;
2D physical simulation;
3D capacitors;
integrated switch;
power switch;
self-controlled IGBT;
self-protected IGBT;
self-switching mode power converters;
62.
Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology
机译:
利用SSRM分析技术开发600V级沟槽填充SJ-MOSFET
作者:
Ono S.
;
Li Zhang
;
Ohta H.
;
Watanabe M.
;
Saito W.
;
Sato S.
;
Sugaya H.
;
Yamaguchi M.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
semiconductor device models;
SSRM analysis technology;
class trench filling;
scanning spread resistance microscopy;
superjunction;
voltage 600 V;
63.
YFET - Trench superjunction process window extended
机译:
YFET-沟槽超结工艺窗口已扩展
作者:
Hirler F.
;
Kapels H.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
carrier density;
doping profiles;
field effect transistors;
semiconductor device breakdown;
semiconductor doping;
Y-shaped field plates;
YFET;
acceptor concentration;
breakdown voltage;
cell pitch;
charge compensated device;
donator concentration;
doping concentrations;
numerical simulation;
oxide filled trenches;
pitch devices;
superjunction devices;
voltage 680 V;
64.
Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process
机译:
采用单个沟槽单元工艺以智能功率IC技术制造沟槽隔离和沟槽功率MOSFET
作者:
Kadow C.
;
Decker S.
;
Dibra D.
;
Krischke N.
;
Lanzerstorfer S.
;
Maier H.
;
Meyer T.
;
Vannucci N.
;
Zink R.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
electric breakdown;
electric resistance;
isolation technology;
power MOSFET;
power integrated circuits;
breakdown voltage;
common-drain smart power IC technology;
logic areas;
single trench unit process;
specific on-resistance;
trench isolation;
trench power MOSFET;
voltage 95 V;
65.
A novel double-gate Trench Insulated Gate Bipolar transistor with ultra-low on-state voltage
机译:
具有超低导通电压的新型双栅沟槽绝缘栅双极晶体管
作者:
Hsu W.C.-W.
;
Udrea F.
;
Ho-Tai Chen
;
Wei-Chieh Lin
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
carrier density;
electrical conductivity;
insulated gate bipolar transistors;
power transistors;
DG-TIGBT;
MOS channels;
carrier charge;
conductivity modulation;
double-gate structure;
switching speed;
trench insulated gate bipolar transistor;
turn-off speed;
turn-off transient;
ultra-low on-state voltage;
voltage 600 V;
66.
Impact of the drift region profile on performance and reliability of RF-LDMOS transistors
机译:
漂移区轮廓对RF-LDMOS晶体管性能和可靠性的影响
作者:
Mai A.
;
Rucker H.
;
Sorge R.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
BiCMOS integrated circuits;
MOSFET;
microwave transistors;
semiconductor device reliability;
HCI robustness;
NLDMOS devices;
RF-LDMOS transistors;
SiGe;
SiGe-BiCMOS technology;
doping profile;
drift region profile;
performance;
reliability;
shallow compensation implant;
size 0.13 mum;
67.
Optimisation of 100V high side LDMOS using multiple simulation techniques
机译:
使用多种仿真技术优化100V高端LDMOS
作者:
Elwin M.
;
Holland P.
;
Anteney I.
;
Ellis J.
;
Armstrong L.
;
Birchby G.
;
Igic P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOS integrated circuits;
optimisation;
3D device simulations;
cross sectional process;
lateral DMOS device;
side bridge applications;
silicon;
voltage 100 V;
68.
Sponsoring
机译:
赞助商
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
69.
GaAs pseudomorphic HEMTs for low voltage high frequency DC-DC converters
机译:
用于低压高频DC-DC转换器的GaAs伪态HEMT
作者:
Pala V.
;
Varadarajan K.
;
Chow T.P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
convertors;
gallium arsenide;
power HEMT;
power conversion;
DC-DC power conversion;
GaAs;
depletion mode transistors;
frequency 100 MHz;
gate charge;
pseudomorphic HEMT;
silicon MOSFET;
switching frequencies;
switching losses;
switching pHEMT;
switching transistors;
70.
High current repetitive avalanche of low voltage trench power MOSFETs
机译:
低压沟槽功率MOSFET的高电流重复雪崩
作者:
Rutter P.
;
Heppenstall K.
;
Koh A.
;
Petkos G.
;
Blondel G.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power MOSFET;
current 135 A;
current 200 A;
high current repetitive avalanche;
low voltage trench power MOSFET;
temperature 150 degC;
time 59 mus;
voltage 20 V;
71.
A novel buffer structure and lifetime control technique with Poly-Si for thin wafer diode
机译:
多晶硅晶片的新型缓冲结构和寿命控制技术
作者:
Fujii H.
;
Inoue M.
;
Hatade K.
;
Tomomatsu Y.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
buffer layers;
elemental semiconductors;
p-n junctions;
silicon;
Si;
broad buffers from double sides structure;
broad nsup-/sup buffer layer;
broad psup-/sup anode layer;
buffer structure;
conductivity modulation level;
fast-recovery diode;
local lifetime control technique;
poly-Si layer;
thin wafer diode;
72.
The Radiation Enhanced Diffusion (RED) Diode realization of a large area p+p-n-n+ structure with high SOA
机译:
具有高SOA的大面积p + p-n-n +结构的辐射增强扩散(RED)二极管实现
作者:
Vobecki J.
;
Zahlava V.
;
Hemmann K.
;
Arnold M.
;
Rahimo M.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
semiconductor diodes;
semiconductor optical amplifiers;
thyristors;
current 1300 A;
current 7 kA;
integrated gate-commutated thyristor;
radiation enhanced diffusion diode;
semiconductor optical amplifier;
size 51 mm;
size 91 mm;
temperature 125 degC;
temperature 140 degC;
voltage 4.5 kV;
73.
Author index
机译:
作者索引
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
74.
Limitation of the short-circuit ruggedness of high-voltage IGBTs
机译:
高压IGBT短路耐用性的限制
作者:
Kopta A.
;
Rahimo M.
;
Schlapbach U.
;
Kaminski N.
;
Silber D.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
insulated gate bipolar transistors;
N-buffer structures;
voltage 3.3 kV;
voltage 4.5 kV;
voltage 6.5 kV;
75.
Normally-off AlGaN/GaN HFETs using NiO
x
gate with recess
机译:
使用带有凹口的NiO
x inf>栅极的常关AlGaN / GaN HFET
作者:
Kaneko N.
;
Machida O.
;
Yanagihara M.
;
Iwakami S.
;
Baba R.
;
Goto H.
;
Iwabuchi A.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
III-V semiconductors;
aluminium compounds;
electric breakdown;
electric resistance;
gallium compounds;
high electron mobility transistors;
leakage currents;
wide band gap semiconductors;
AlGaN-GaN;
HFET;
MOSFET;
breakdown voltage;
drain current;
gate electrode;
gate leakage current;
on-resistance-area product;
p-type material;
resistance 72 mohm;
threshold voltage;
76.
The foundry perspective on integrated power technologies
机译:
代工对集成电源技术的看法
作者:
Chen K.
;
Chen C.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
integrated circuit design;
power MOSFET;
integrated power technologies;
77.
High frequency 700V PowerBrane LIGBTs in 0.35µm bulk CMOS technology
机译:
采用0.35µm块状CMOS技术的高频700V PowerBrane LIGBT
作者:
Trajkovic T.
;
Udugampola N.
;
Pathirana V.
;
Mihaila A.
;
Udrea F.
;
Amaratunga G.A.J.
;
Koutny B.
;
Ramkumar K.
;
Geha S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
CMOS integrated circuits;
insulated gate bipolar transistors;
monolithic integrated circuits;
power integrated circuits;
semiconductor device reliability;
sputter etching;
CMOS technology;
PowerBrane LIGBT;
deep RIE;
high voltage blocking capability;
membrane formation;
monolithically integrated power IC;
on-state current density;
plastic packages;
reliability;
size 0.35 mum;
thermal dissipation;
voltage 700 V;
78.
Schedule at a glance
机译:
一览表
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
79.
5.5 V zero-channel power MOSFETs with R
on,sp
of 1.0 mΩ·mm
2
for portable power management applications
机译:
5.5 V零通道功率MOSFET,R
on,sp inf>为1.0mΩ·mm
2 sup>,适用于便携式电源管理应用
作者:
Huang W.
;
Zhu R.
;
Khemka V.
;
Khan T.
;
Fu Y.
;
Cheng X.
;
Hui P.
;
Ger M.L.
;
Rodriquez P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
portable instruments;
power MOSFET;
hot carrier injection immunity;
portable power management applications;
voltage 5.5 V;
zero-channel power MOSFETs;
80.
A novel 80V-class HV-MOS platform technology featuring high-side capable 30V-gate-voltage drift-NMOSFET and a trigger controllable ESD protection BJT
机译:
一种新颖的80V级HV-MOS平台技术,具有高侧能力的30V栅极电压漂移NMOSFET和触发器可控ESD保护BJT
作者:
Fujii H.
;
Komatsu S.
;
Sato M.
;
Ichikawa T.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
electrostatic discharge;
power MOSFET;
semiconductor device breakdown;
BJT;
ESD protection;
LOCOS;
buffer base region;
drift-NMOSFET;
endurance voltage;
extended source region;
high voltage MOS platform;
off-state drain breakdown voltage;
on-state drain breakdown voltage;
specific on-resistance;
stacked source-side structure;
trigger voltage;
voltage 30 V;
voltage 78 V to 102 V;
waved p+ stopper;
81.
Towards universal and voltage-scalable high gate- and drain-voltage MOSFETs in CMOS
机译:
迈向CMOS通用和可缩放电压的高栅极和漏极MOSFET
作者:
Sonsky J.
;
Doornbos G.
;
Heringa A.
;
van Duuren M.
;
Perez-Gonzalez J.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power MOSFET;
semiconductor device measurement;
voltage measurement;
CMOS technology;
conduction channel;
current flow;
gate dielectric thickness;
gate oxide integrity lifetime;
high drain-voltage MOSFET;
hybrid MOSFET;
lateral fringing capacitance;
layout-defined high gate voltage;
planar MOSFET;
size 65 nm;
voltage-scalable high gate-voltage MOSFET;
82.
Record 2.8mΩ-cm
2
1.9kV enhancement-mode SiC VJFETs
机译:
记录2.8mΩ-cm
2 sup> 1.9kV增强型SiC VJFET
作者:
Sheridan D.C.
;
Ritenour A.
;
Bondarenko V.
;
Burks P.
;
Casady J.B.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
avalanche breakdown;
junction gate field effect transistors;
silicon compounds;
wide band gap semiconductors;
SiC;
VJFET;
avalanche breakdown voltage;
current 12 A;
current 15 A;
enhancement mode functionality;
intrinsic capacitances;
low DIBL characteristics;
optimized channel design;
short circuit;
temperature 175 degC;
temperature 25 degC;
voltage 1.9 kV;
voltage 600 V;
83.
A new Internal Transparent Collector IGB
机译:
新的内部透明收集器IGB
作者:
Dongqing Hu
;
Yu Wu
;
Baowei Kang
;
Xuelan You
;
Xu Cheng
;
Sin J.K.O.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
annealing;
carrier lifetime;
current density;
insulated gate bipolar transistors;
ion beam effects;
vacancies (crystal);
carrier lifetime control layer;
electron irradiation;
helium irradiation;
insulated gate bipolar transistor;
internal transparent collector IGBT;
nanovacancy layer;
p-collector-n-buffer junction;
planar gates;
room temperatures I-V characteristics;
turn-off time;
voltage 600 V;
zero temperature coefficient point;
84.
Accelerated test for reliability analysis of SiC diodes
机译:
SiC二极管可靠性分析的加速测试
作者:
Banu V.
;
Jorda X.
;
Montserrat J.
;
Godignon P.
;
Millan J.
;
Brosselard P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
lead bonding;
life testing;
power semiconductor diodes;
semiconductor device reliability;
semiconductor device testing;
silicon compounds;
wide band gap semiconductors;
SiC;
accelerated test;
half-sinusoidal current pulse test;
power cycling behavior;
power silicon carbide diode;
reliability analysis;
self-heating;
surge current;
temperature 300 C;
time 10 ms;
time 3 h;
wire bonding;
85.
Diamond high-temperature power devices
机译:
金刚石高温功率器件
作者:
Umezawa H.
;
Shikata S.-i.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
Schottky barriers;
Schottky diodes;
diamond;
elemental semiconductors;
leakage currents;
power semiconductor diodes;
semiconductor epitaxial layers;
Jk-C;
Schottky barrier height;
epitaxial diamond films;
high power Schottky barrier diodes;
metal-diamond stability;
reverse leakage current;
temperature 415 K;
86.
A novel strategy of a control IC for boost converter with ultra low voltage input and maximum power point tracking for single solar cell application
机译:
用于超低电压输入和最大功率点跟踪的升压转换器控制IC的新颖策略,适用于单个太阳能电池应用
作者:
Matsumoto S.
;
Shodai T.
;
Kanai Y.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
low-power electronics;
power convertors;
solar cells;
boost converter;
integrated circuits;
maximum power point tracking;
photovoltaic module;
solar cell;
voltage 0.36 V;
87.
Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process
机译:
在0.18um BCD工艺中实现缓冲超结LDMOS
作者:
Il-Yong Park
;
Yong-Keon Choi
;
Kwang-Young Ko
;
Chul-Jin Yoon
;
Yong-Seong Kim
;
Mi-Young Kim
;
Hyun-Tae Kim
;
Hyon-Chol Lim
;
Nam-Joo Kim
;
Kwang-Dong Yoo
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
BIMOS integrated circuits;
MOSFET;
buffered super-junction LDMOS;
transistor;
voltage 98 V;
88.
Chairman's message
机译:
董事长致辞
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
89.
0.15µm BiC-DMOS technology with novel stepped-STI N-channel LDMOS
机译:
0.15µm BiC-DMOS技术和新型阶梯式STI N通道LDMOS
作者:
Yanagi S.
;
Kimura H.
;
Nitta T.
;
Kuroi T.
;
Hatasako K.
;
Maegawa S.
;
Onishi K.
;
Otsu Y.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
CMOS integrated circuits;
MOSFET;
BiC-DMOS technology;
CMOS;
n-channel LDMOS;
shallow trench isolation;
90.
Accumulation region length impact on 0.18µm CMOS fully-compatible lateral power MOSFETs with Shallow Trench Isolation
机译:
浅沟槽隔离对0.18µm CMOS完全兼容横向功率MOSFET的累积区域长度影响
作者:
Roig J.
;
Moens P.
;
Bauwens F.
;
Medjahed D.
;
Mouhoubi S.
;
Gassot P.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
CMOS integrated circuits;
isolation technology;
power MOSFET;
power integrated circuits;
CMOS technology;
lateral power MOSFET;
shallow trench isolation;
voltage 12 V to 22 V;
91.
New self heating structures for thermal coupling modeling on multi-fingered SOI power devices
机译:
用于多指SOI功率器件热耦合建模的新型自加热结构
作者:
Hniki S.
;
Bertrand G.
;
Morancho F.
;
Ortolland S.
;
Minondo M.
;
Rauber B.
;
Raynaud C.
;
Giry A.
;
Bon O.
;
Jaouen H.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
elemental semiconductors;
power semiconductor devices;
semiconductor device models;
silicon;
silicon-on-insulator;
NLDEMOS devices;
SOI technology;
Si;
multifingered SOI power devices;
self heating structures;
thermal coupling coefficients;
thermal coupling modeling;
thermal profile;
transistor;
92.
1
st
announcement
机译:
1
st sup>公告
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
93.
Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications
机译:
用于汽车应用的智能电源开关的热仿真和超快红外温度映射
作者:
Riccio M.
;
Irace A.
;
Breglio G.
;
Spirito P.
;
Kosel V.
;
Glavanovics M.
;
Satka A.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
automotive electronics;
finite element analysis;
high-speed optical techniques;
power integrated circuits;
switches;
electro-thermal interactions;
finite elements thermal simulations;
low-voltage smart power MOSFET;
smart power switch;
ultrafast infrared temperature mapping;
94.
Power device stacking using surface bump connections
机译:
使用表面凸点连接的功率器件堆叠
作者:
Castellazzi A.
;
Mermet-Guyennet M.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
bridge circuits;
cooling;
interconnections;
power semiconductor diodes;
power semiconductor switches;
silicon;
thermal management (packaging);
IGBT;
Si;
antiparallel freewheeling diodes;
bond-wires replacement;
double sided chip cooling;
functional prototypal half-bridge switch;
half-bridge interconnection;
integration approach;
power system design;
silicon power device stacking;
stray inductance reduction;
surface bump connections;
vertically integrated switch;
95.
Investigation on saturation effects in the rugged LDMOS transistor
机译:
坚固耐用的LDMOS晶体管的饱和效应研究
作者:
Reggiani S.
;
Gnani E.
;
Gnudi A.
;
Baccarani G.
;
Denison M.
;
Pendharkar S.
;
Wise R.
;
Seetharaman S.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
MOSFET;
drain-current enhancement;
laterally diffused MOS transistor;
quasi-saturation effects;
96.
Seebeck difference - temperature sensors integrated into smart power technologies
机译:
Seebeck差异-集成到智能电源技术中的温度传感器
作者:
Dibra D.
;
Stecher M.
;
Lindemann A.
;
Lutz J.
;
Kadow C.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
Seebeck effect;
power MOSFET;
power integrated circuits;
temperature sensors;
difference temperature sensors;
drain smart power MOSFET technology;
97.
Effect of mechanical stress on LDMOSFETs: Dependence on orientation and gate bias
机译:
机械应力对LDMOSFET的影响:取决于方向和栅极偏置
作者:
Aghoram U.
;
Liu J.
;
Chu M.
;
Koehler A.D.
;
Thompson S.E.
;
Sridhar S.
;
Wise R.
;
Pendharkar S.
;
Denison M.
会议名称:
《Power Semiconductor Devices amp; IC's, 2009. ISPSD 2009》
|
2009年
关键词:
power MOSFET;
N-laterally diffused MOSFET;
breakdown voltage;
drain extended PMOSFET;
gate bias;
linear drain current enhancement;
mechanical stress effect;
on-resistance voltage;
piezoresistance coefficients;
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