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PROTECTIVE STRUCTURE OF AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES

机译:静电放电综合电路的保护结构

摘要

An integrated circuit includes at least one input-output pad and a terminal intended to be connected to a source of a reference potential and further including a protection structure including a thyristor forward-connected between the pad and the terminal. The thyristor includes a first resistor between its cathode gate and the terminal. At least one Zener diode is disposed between the thyristor and the pad. The anode of the Zener diode is connected to the cathode gate of the thyristor and the cathode of the Zener diode is connected to the pad via at least one second resistor. The junction of the Zener diode is different from the junctions of the PNPN structure of the thyristor.
机译:一种集成电路,包括至少一个输入-输出焊盘和旨在连接到参考电位源的端子,并且还包括保护结构,该保护结构包括在该焊盘和端子之间正向连接的晶闸管。晶闸管在其阴极栅极和端子之间包括第一电阻器。至少一个齐纳二极管布置在晶闸管和焊盘之间。齐纳二极管的阳极连接到晶闸管的阴极栅极,而齐纳二极管的阴极通过至少一个第二电阻器连接到焊盘。齐纳二极管的结点与晶闸管的PNPN结构的结点不同。

著录项

  • 公开/公告号FR3054722B1

    专利类型

  • 公开/公告日2018-08-17

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS (ROUSSET) SAS;

    申请/专利号FR20160057160

  • 发明设计人 FRANCOIS TAILLIET;

    申请日2016-07-26

  • 分类号H01L23/60;H01L27/02;H01L29/866;H01L21/822;

  • 国家 FR

  • 入库时间 2022-08-21 12:33:04

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